Synthesis and Characterizations of GeS0.5Se0.5 (I2) Single Crystals

Authors

  • Sandip Unadkat Assistant Professor, Department of Physics, BVM Engineering College, Gujarat, India
  • G. K. Solanki Professor, Department of Physics, S. P. University, India
  • Ruchita Patel Assistant Professor, Department of Physics, S. P. University, India.

Abstract

Material processing of layered structure remains a widely investigated subject in recent time due to their anisotropic properties. The large volume of work carried out in this field is of importance not only in basic science but also in industrial as well as energy applications. In this paper authors report growth of GeS0.5Se0.5 (I2) single crystals using Chemical Vapour Transport (CVT) technique with iodine as a transporting agent. Photograph of Energy Dispersive Analysis of X-ray (EDAX) showed that Ges0.5Se0.5 (I2) single crystals were nearly in stoichiometry. The structural characterization of grown crystal was done using X-ray Diffraction (XRD) technique, which reveals the orthorhombic structure of grown crystals and based on these data different lattice parameters were calculated. The single crystallinity was verified through Transmission Electron Microscopy (TEM). The Hall Effect measurements were made on cleavage surface of the single crystal along the layers, i.e. perpendicular to the direction of c-axis. Various parameters like Hall Coefficient, Carrier Concentration, Type and Mobility were measured with varying magnetic field. P-type nature of the grown crystal was confirmed from the obtained value of Hall Coefficient.

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Published

2019-06-13

Issue

Vol. 7 No. 1 (2019)

Section

Articles

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