Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate Dielectric

Abstract

Abstract

In this report, we present a comparative analysis of ultrashort 3-D junctionless nanowire DGMOS transistors using different high-k gate dielectric by virtually fabricating the device in Visual TCAD. The ultrashort devices having channel length of 20 nm were simulated and performances like I-V characteristics, transconductance etc. were analysed. It was found that HfO₂ has better steady state performances as gate dielectric owing to better control of the channel over the SiO₂ and Si₃N₄.

Keywords: Junctionless DGMOS nanowire transistors; High-k gate dielectric; 3-D virtual fabrication

Cite this Article

N. Bora, R. Subadar. Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate Dielectric. Journal of Communication Engineering & Systems. 2019; 9(1): 35–42p.