Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate Dielectric

Authors

  • N. Bora
  • R. Subadar

Abstract

Abstract

In this report, we present a comparative analysis of ultrashort 3-D junctionless nanowire DGMOS transistors using different high-k gate dielectric by virtually fabricating the device in Visual TCAD. The ultrashort devices having channel length of 20 nm were simulated and performances like I-V characteristics, transconductance etc. were analysed. It was found that HfO2 has better steady state performances as gate dielectric owing to better control of the channel over the SiO2 and Si3N4.

Keywords: Junctionless DGMOS nanowire transistors; High-k gate dielectric; 3-D virtual fabrication

Cite this Article

N. Bora, R. Subadar. Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate Dielectric. Journal of Communication Engineering & Systems. 2019; 9(1): 35–42p.


Downloads

Published

2019-06-24

Issue

Vol. 9 No. 1 (2019)

Section

Articles

License

Declaration and Copyright Transfer Form

(to be completed by authors)

I/ We, the undersigned author(s) of the submitted manuscript, hereby declare, that the above manuscript which is submitted for publication in the STM Journals(s), is not published already in part or whole (except in the form of abstract) in any journal or magazine for private or public circulation, and, is not under consideration of publication elsewhere.

  • I/We will not withdraw the manuscript after 1 week of submission as I have read the Author Guidelines and will adhere to the guidelines.
  • I/We Author(s ) have niether given nor will give this manuscript elsewhere for publishing after submitting in STM Journal(s).
  • I/ We have read the original version of the manuscript and am/ are responsible for the thought contents embodied in it. The work dealt in the manuscript is my/ our own, and my/ our individual contribution to this work is significant enough to qualify for authorship.
  •  I/We also agree to the authorship of the article in the following order:

Author’s name                                    

 

1. ________________

2. ________________

3. ________________

4. ________________

 

We  Author(s) tick this box and would request you to consider it as our signature as we agree to the terms of this Copyright Notice, which will apply to this submission if and when it is published by this journal.