Optimized Performance Characteristics of a 450 nm Semiconductor Laser by Varying Differential Gain
DOI:
https://doi.org/10.37591/joces.v3i3.296Abstract
Abstract
In this work, the effects on the performance characteristics of a true-blue 3QW separate confinement heterostrcture edge-emitting laser are presented by varying differential gain. At the temperature of 300 K, the threshold current of the laser is . The peak material gain for the designed laser is obtained as and further used for the analysis of the performance characteristics of the designed double-heterostructure laser for the variation of differential gain. From the performance analysis, the maximum allowable differential gain is above which the steady state carrier density falls below the threshold level where lasing mechanism does not sustain. At this optimized value of differential gain, the maximum output power of the laser is , the maximum resonance frequency is and the corresponding modulation bandwidth is for the injection current of at the temperature of 300 K.
Keywords: True blue laser, MQW, output power, resonance frequency, modulation bandwidth, differential gain
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